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Загальна кількість знайдених документів : 22
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| 1. |
Studenyak I. P.
Temperature studies of Urbach absorption edge in implanted Cu6PS5Br crystals [Електронний ресурс] / I. P. Studenyak, V. Yu. Izai, V. V. Panko, P. Kus, A. Plecenik // Ukrainian journal of physical optics. - 2010. - Vol. 11, № 3. - С. 175-184. - Режим доступу: http://nbuv.gov.ua/UJRN/UJPO_2010_11_3_8
| | 2. |
Studenyak I. P.
Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals [Електронний ресурс] / I. P. Studenyak, V. Yu. Izai, V. O. Stephanovich, V. V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 3. - С. 287-293. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_3_6
Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P<^>+ ions; the energy of ions was 150 keV. For the implanted Cu6PS5X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77 - 320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu6PS5X (X = I, Br) superionic conductors have been studied.
| | 3. |
Studenyak I. P.
Influence of cation substitution on phase transition and optical absorption edge in Cu6(P1-xAsx)S5I mixed crystals [Електронний ресурс] / I. P. Studenyak, M. Kranjcec, M. I. Kayla, V. Yu. Izai, A. F. Orliukas // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 2. - С. 146-151. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_2_11
Electrical conductivity of Cu7(Ge1-xSix)S5I mixed crystals was measured in the frequency range <$E 1,0~cdot~10 sup 6~-~1,2~cdot~10 sup 9> Hz and in the temperature interval 100 - 300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu7(Ge1-xSix)S5I mixed crystals within the temperature range 77 - 300 К was studied. The compositional dependences of the electrical conductivity, activation energy, optical pseudogap and Urbach energy were obtained. The influence of <$E roman {Ge~symbol О~Si}> cation substitution on the optical absorption processes in the Cu7(Ge1-xSix)S5I mixed crystals is investigated.Cu6(P1-xAsx)S5I mixed crystals were grown using chemical vapour transport. Temperature isoabsorption investigations of optical absorption edge enable to reveal anomalies typical for the first- and second-order phase transitions as well as to construct the x, T-diagram. The spectrometric measurements of the optical absorption edge in Cu6(P1-xAsx)S5I superionic mixed crystals were carried out within the temperature range 77 - 320 K. The influence of temperature and composition on optical absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu6(P1-xAsx)S5I superionic mixed crystals have been studied.(Cu1-xAgx)7SiS5I mixed crystals were grown using the vertical zone crystallization method, they have been shown to crystallize in cubic structure (<$EF 4 Bar 3m>). The diffuse reflection spectra for the powders of (Cu1-xAgx)7SiS5I mixed crystals were measured at room temperature. Refractive indices and extinction coefficients for (Cu1-xAgx)7SiS5I mixed crystals were obtained from spectral ellipsometry measurements. A nonlinear decrease of the energy pseudogap and a nonlinear behavior with the maximum of refractive index have been revealed with increasing the Ag content. The dispersion of refractive indices of (Cu1-xAgx)7SiS5I has been described in the framework of different models.Керамічні зразки на основі мікрокристалічних порошків (Cu1-xAgx)7GeSe5I (x = 0, 0,25, 0,5, 0,75, 1) виготовлено шляхом їх пресування за тиску ~ 400 МПа з наступним відпалом за температурти 873 К протягом 36 год. З використанням методу мікроструктурного аналізу визначено розміри кристалітів одержаних керамік. Дослідження електропровідності керамічних матеріалів (Cu1-xAgx)7GeSe5I проведено за допомогою методу імпедансної спектроскопії у частотному діапазоні <$E10~-~3~cdot~10 sup 5> Гц та у температурному інтервалі 293 - 383 К. За результатами аналізу частотної залежності електропровідності на діаграмах Найквіста визначено внески іонної та електронної компонент електропровідності, а також їх співвідношення. Термоактиваційний характер електропровідності підтверджено на основі лінійності температурних залежностей її компонент в арреніусівських координатах. Побудовано відповідні концентраційні залежності іонної та електронної компонент електропровідності та їх енергій активації. Встановлено, що вони носять нелінійний характер, який пояснюється складним процесом рекристалізації та заміщенням <$Eroman Cu sup + symbol Л~roman Ag sup +> у межах катіонної підгратки.
| | 4. |
Studenyak I. P.
Temperature studies of optical parameters in (Ag3AsS3)0.6(As2S3)0.4 thin films [Електронний ресурс] / I. P. Studenyak, M. M. Kutsyk, Y. Y. Rati, V. Yu. Izai, S. Kokenyesi, L. Daroci, R. Bohdan // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 2. - С. 188-192. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_2_16
(Ag3AsS3)0,6(As2S3)0,4 thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission spectra of thin films were studied within the temperature range 77 - 300 K. The absorption spectra in the region of its exponential behaviour were analysed, the dispersion dependences of refractive index as well as the temperature dependences of energy position of absorption edge and Urbach energy were investigated.(Ag3AsS3)0,6(As2S3)0,4 thin films deposited using the thermal evaporation technique onto glass substrates previously covered with layers of gold nanoparticles were studied. Optical transmission spectra of the sandwich structure were studied within the temperature range 77 - 300 K. The absorption spectra in the region of its exponential behaviour were analyzed, the dispersion dependences of refractive index as well as the temperature dependences of the energy pseudogap and Urbach energy were investigated. The disordering processes in the sandwich structure were discussed. The comparative analyses of optical parameters in single (Ag3AsS3)0,6(As2S3)0,4 layer and in the sandwich structure were performed.
| | 5. |
Studenyak I. P.
Optical studies of as-deposited and annealed Cu7GeS5I thin films [Електронний ресурс] / I. P. Studenyak, A. V. Bendak, S. O. Rybak, V. Yu. Izai, P. Kúš, M. Mikula // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 2. - С. 192-196. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_2_12
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the temperature interval 77 - 300 K. The temperature behaviour of Urbach absorption edge and dispersion of refractive index for as-deposited and annealed Cu7GeS5I thin films was analyzed. Influence of annealing on the optical parameters and disordering processes in Cu7GeS5I thin films was studied.
| | 6. |
Studenyak I. P.
Structural, electrical and optical investigations of Cu6PS5 Br-based thin film deposited by HiTUS technique [Електронний ресурс] / I. P. Studenyak, M. M. Kutsyk, V. I. Studenyak, A. V. Bendak, V. Yu. Izai, P. Kus, M. Mikula // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 3. - С. 307-310. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_3_14
Cu6,35P1,77S4,72Br0,15 thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical "forest-like" quasi-two-dimensional pillared structure. Electrical conductivity of Cu6,35P1,77S4,72Br0,15thin film was measured in the temperature interval 4,5 - 300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu6,35P1,77S4,72Br0,15 thin film.
| | 7. |
Studenyak I. P.
Compositional studies of optical parameters in (Ag3AsS3)x(As2S3)1–x (x = 0.3; 0.6; 0.9) thin films [Електронний ресурс] / I. P. Studenyak, M. Kranjcec, M. M. Kutsyk, Yu. O. Pal, Yu. Yu. Neimet, V. Yu. Izai, I. I. Makauz, C. Cserhati, S. Kokenyesi // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 4. - С. 371-376. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_4_10
(Ag3AsS3)x(As2S3)1-x (x = 0,3; 0,6; 0,9) thin films were deposited onto a silica substrate by rapid thermal evaporation. The amount of Ag-rich crystalline phase precipitates on the surfaces of the films increases with Ag3AsS3 content. It has been shown that the absorption edge spectra are described by the Urbach rule. The temperature behaviour of absorption spectra was studied, the temperature dependences of energy position of absorption edge and Urbach energy were also investigated. The influence of compositional disordering due to Ag3AsS3 introduction into As2S3 on the optical parameters of (Ag3AsS3)x(As2S3)1-x thin films were analyzed. The spectral temperature and compositional behaviour of refractive index for (Ag3AsS3)x(As2S3)1-x thin films were studied.
| | 8. |
Studenyak I. P.
Structural and optical studies of Cu6PSe5I-based thin film deposited by magnetron sputtering [Електронний ресурс] / I. P. Studenyak, M. M. Kutsyk, A. V. Bendak, V. Yu. Izai, V. V. Bilanchuk, P. Kus, M. Mikula // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 1. - С. 64-68. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_1_10
(Ag3AsS3)0,6(As2S3)0,4 thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 C. Structural studies of the as-deposited thin films were carried out by scanning electron microscopy and atomic force microscopy. It is shown that the surfaces of all the films were covered with Ag-rich crystalline micrometer sized cones. The optical transmission spectra for as-deposited thin films were studied at room temperature. The absorption spectra in the region of its exponential behaviour were analyzed, the dispersion dependences of refractive index as well as their variation depending on evaporation temperature were investigated.Cu5,5P1,2Se5,0I1,3 thin film was deposited onto silicate glass substrate by nonreactive radio frequency magnetron sputtering. Structural studies were carried out using X-ray diffraction and SEM techniques. Spectrometric studies of transmission spectra of Cu5,5P1,2Se5,0I1,3 thin film in the temperature interval 77 to 300 К were investigated. It is shown that the temperature behaviour of optical absorption edge is described by the Urbach rule. Temperature dependences of optical parameters of the Urbach absorption edge and refractive index have been analyzed. The influence of temperature and structural disordering on the Urbach tail has been studied. The comparison of optical parameters of Cu6PSe5I crystal and Cu5,5P1,2Se5,0I1,3 thin film has been performed.
| | 9. |
Studenyak I. P.
Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering [Електронний ресурс] / I. P. Studenyak, A. V. Bendak, V. Yu. Izai, P. P. Guranich, P. Kus, M. Mikula, B. Grancic, M. Zahoran, J. Gregus, A. Vincze // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 1. - С. 79-83. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_1_17
Cu6PS5I-based thin films were deposited onto silicate glass substrates by non-reactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. Electrical conductivity of Cu6PS5I-based thin films was studied as dependent on chemical composition. Optical transmission spectra of Cu5,46P1,68S5,06I0,80 thin film were investigated within the temperature interval 77...300 K; temperature behaviour of optical absorption spectra and dispersion of the refractive index were also studied. Temperature dependences of the energy position of absorption edge, Urbach energy and refractive index of Cu5,46P1,68S5,06I0,80 thin film have been analyzed.
| | 10. |
Studenyak I. P.
Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering [Електронний ресурс] / I. P. Studenyak, M. M. Kutsyk, A. V. Bendak, V. Yu. Izai, P. Kus, M. Mikula // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 246-249. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_19
Cu6PS5I-based thin films were deposited using non-reactive radio-frequency magnetron sputtering. Structural studies of thin films were performed by scanning electron microscopy, their chemical composition were determined using energy-dispersive X-ray spectroscopy. As-deposited thin films were irradiated with wideband radiation of Cu-anode X-ray tube at different exposition times. Optical transmission spectra of X-ray irradiated Cu5,56P1,66S4,93I0,85 thin films were measured depending on irradiation time. The Urbach absorption edge and dispersion of refractive index for X-ray irradiated Cu5,56P1,66S4,93I0,85 thin films were studied. It has been revealed the nonlinear decrease of energy pseudogap and nonlinear increase of refractive index with increase of X-ray irradiation time.
| | 11. |
Studenyak I. P.
Structure and Raman spectra of (Cu6PS5I)1–x(Cu7PS6)x mixed crystals [Електронний ресурс] / I. P. Studenyak, M. M. Luchynets, V. Yu. Izai, A. I. Pogodin, O. P. Kokhan, Yu. M. Azhniuk, D. R. T. Zahn // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 3. - С. 369-374. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_3_17
Mixed (Cu6PS5I)1-x(Cu7PS6)x crystals were grown using a direct crystallization technique. Being based on the X-ray diffraction data, their crystal structure was studied, showing face-centred cubic lattice for Cu6PS5I-rich solid solutions (x << 0,12) and primitive cubic lattice for Cu7PS6-rich (0,84 << x << 1) solid solutions. These structural data correlate with the Raman spectra where, besides the common features typical for the argyrodite-type Cu6PS5I and Cu7PS6 crystals, weaker bands characteristic only for the end-point compounds are revealed in the corresponding compositional intervals.
| | 12. |
Studenyak I. P.
Optical parameters of X-ray irradiated Cu7GeS5I thin films [Електронний ресурс] / I. P. Studenyak, A. V. Bedak, V. Yu. Izai, А. М. Solomon, P. Kúš, M. Mikula // Науковий вісник Ужгородського університету. Серія : Фізика. - 2016. - Вип. 39. - С. 51-56. - Режим доступу: http://nbuv.gov.ua/UJRN/Nvuufiz_2016_39_9
| | 13. |
Studenyak I. P.
Deposition and physical properties of Cu6PS5I-based thin films [Електронний ресурс] / I. P. Studenyak, V. Yu. Izai, A. V. Bendak, M. M. Kutsyk, P. P. Guranich, P. Kus, M. Mikula, B. Grancic, T. Roch // Науковий вісник Ужгородського університету. Серія : Фізика. - 2016. - Вип. 40. - С. 72-79. - Режим доступу: http://nbuv.gov.ua/UJRN/Nvuufiz_2016_40_13
| | 14. |
Kovalchuk O. V.
Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles [Електронний ресурс] / O. V. Kovalchuk, I. P. Studenyak, V. Yu. Izai, S. O. Rybak, A. I. Pogodin, P. Kopčanský, M. Timko, V. Gdovinova, J. Mariano, T. M. Kovalchuk // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 4. - С. 437-441. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_4_9
The influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range <$E10 sup 1 ~-~10 sup 6> Hz and at the temperature 293 K. It has been shown that when changing the concentration of nanoparticles within the range 0 to 1 wt.%, the conductivity of the liquid crystal changes stronger than its dielectric permittivity. It has been shown that the electrical conductivity increases monotonously with increasing the concentration of nanoparticles. However, for this dependence a saturation effect is observed. The mechanism of this effect was proposed.
| | 15. |
Studenyak I. P.
Optical properties of X-ray irradiated Cu6PS5I-based thin films deposited by magnetron sputtering [Електронний ресурс] / I. P. Studenyak, A. V. Bendak, M. O. Vizenko, V. Yu. Izai, A. M. Solomon, P. Kúš // Науковий вісник Ужгородського університету. Серія : Фізика. - 2017. - Вип. 41. - С. 7-13. - Режим доступу: http://nbuv.gov.ua/UJRN/Nvuufiz_2017_41_3
| | 16. |
Studenyak I. P.
Optical and electrical properties of Cu6PS5I-based thin films versus copper content variation [Електронний ресурс] / I. P. Studenyak, V. Yu. Izai, A. V. Bendak, P. P. Guranich, Yu. M. Azhniuk, P. Kus, D. R. Zahn // Ukrainian journal of physical optics. - 2017. - Vol. 18, № 4. - С. 232-238. - Режим доступу: http://nbuv.gov.ua/UJRN/UJPO_2017_18_4_8
| | 17. |
Studenyak I. P.
Temperature studies of optical absorption in sandwich structure based on (Ag3AsS3)0.6(As2S3)0.4 thin film and gold nanoparticles [Електронний ресурс] / I. P. Studenyak, Z. R. Molnar, M. M. Kutsyk, V. Yu. Izai, M. Kranjcec, S. Kokenyesi // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 1. - С. 89-94. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_1_13
(Ag3AsS3)0,6(As2S3)0,4 thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission spectra of thin films were studied within the temperature range 77 - 300 K. The absorption spectra in the region of its exponential behaviour were analysed, the dispersion dependences of refractive index as well as the temperature dependences of energy position of absorption edge and Urbach energy were investigated.(Ag3AsS3)0,6(As2S3)0,4 thin films deposited using the thermal evaporation technique onto glass substrates previously covered with layers of gold nanoparticles were studied. Optical transmission spectra of the sandwich structure were studied within the temperature range 77 - 300 K. The absorption spectra in the region of its exponential behaviour were analyzed, the dispersion dependences of refractive index as well as the temperature dependences of the energy pseudogap and Urbach energy were investigated. The disordering processes in the sandwich structure were discussed. The comparative analyses of optical parameters in single (Ag3AsS3)0,6(As2S3)0,4 layer and in the sandwich structure were performed.
| | 18. |
Izai V. Yu.
Electrical and dielectrical properties of composites based on (Ag1-xCux)7GeS5I mixed crystals [Електронний ресурс] / V. Yu. Izai, V. I. Studenyak, A. I. Pogodin, I. P. Studenyak, M. Rajňák, J. Kurimsky, M. Timko, P. Kopcansky // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 4. - С. 387-391. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_4_11
Polymer composites were prepared from (Ag1-xCux)7GeS5I mixed crystals grown using Bridgman - Stockbarger method. The impedance measurements were performed at room temperature in the frequency range <$E10 sup -3 ~-~2~cdot~10 sup 6> Hz. The frequency dependences of electrical conductivity and dielectric permittivity for composites based on (Ag1-xCux)7GeS5I mixed crystals were obtained. The Nyquist plots for (Ag1-xCux)7GeS5I-based composite has been analyzed. The influence of cation <$Eroman {Ag~symbol О ~Cu}> substitution on electrical conductivity of composites based on (Ag1-xCux)7GeS5I mixed crystals has been studied.
| | 19. |
Studenyak I. P.
Interrelations between structural and optical properties of (Cu1–хAgx)7GeS5I mixed crystals [Електронний ресурс] / I. P. Studenyak, V. Yu. Izai, V. I. Studenyak, A. I. Pogodin, M. Y. Filep, O. P. Kokhan, B. Grančič, P. Kúš // Ukrainian journal of physical optics. - 2018. - Vol. 19, № 4. - С. 237-243. - Режим доступу: http://nbuv.gov.ua/UJRN/UJPO_2018_19_4_7
| | 20. |
Izai V. Yu.
Preparation and electrical properties of composites based on (Cu6PS5I)1-x(Cu7PS6)x mixed crystals [Електронний ресурс] / V. Yu. Izai, M. M. Luchynets, I. P. Studenyak, A. I. Pogodin, O. P. Kokhan, M. Rajňák, M. Timko, P. Kopcansky // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 182-187. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_9
(Cu6PS5I)1-x(Cu7PS6)x mixed crystals were grown using the direct crystallization technique from melt (Bridgman - Stockbarger technique). The polymer composites based on (Cu6PS5I)1-x(Cu7PS6)x mixed crystals were prepared. Electrical properties of composites were studied in the frequency range from 10<^>-3 Hz to <$E2~cdot~10 sup 6> Hz at room temperature. The parallel equivalent circuit with double electric layer assumed at the electrode interface was applied to analyze the frequency dependences of electrical conductivity. It has been shown that the highest value of total electric conductivity is observed for the (Cu6PS5I)0,75(Cu7PS6)0,25-based composite. The further increase of Cu7PS6 content leads to the monotonically decreasing values of total electric conductivity. The ratio of total ionic to electronic components demonstrates the highest value for Cu6PS5I-based composite.
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